arXiv:cond-mat/9806117AbstractReferencesReviewsResources
High Temperature Conductance of the Single Electron Transistor
Georg Goeppert, Hermann Grabert
Published 1998-06-09, updated 1998-11-13Version 3
The linear conductance of the single electron transistor is determined in the high temperature limit. Electron tunneling is treated nonperturbatively by means of a path integral formulation and the conductance is obtained from Kubo's formula. The theoretical predictions are valid for arbitrary conductance and found to explain recent experimental data.
Comments: 4 pages, 2 figures
Journal: Phys. Rev. B 58, R10155 (1998)
Categories: cond-mat.mes-hall
Keywords: single electron transistor, high temperature conductance, high temperature limit, path integral formulation, linear conductance
Tags: journal article
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