{
  "id": "cond-mat/9806117",
  "version": "v3",
  "published": "1998-06-09T11:02:57.000Z",
  "updated": "1998-11-13T08:35:58.000Z",
  "title": "High Temperature Conductance of the Single Electron Transistor",
  "authors": [
    "Georg Goeppert",
    "Hermann Grabert"
  ],
  "comment": "4 pages, 2 figures",
  "journal": "Phys. Rev. B 58, R10155 (1998)",
  "doi": "10.1103/PhysRevB.58.R10155",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "The linear conductance of the single electron transistor is determined in the high temperature limit. Electron tunneling is treated nonperturbatively by means of a path integral formulation and the conductance is obtained from Kubo's formula. The theoretical predictions are valid for arbitrary conductance and found to explain recent experimental data.",
  "revisions": [
    {
      "version": "v3",
      "updated": "1998-11-13T08:35:58.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "single electron transistor",
      "high temperature conductance",
      "high temperature limit",
      "path integral formulation",
      "linear conductance"
    ],
    "tags": [
      "journal article"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 4,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}