Thermopower of a single electron transistor in the regime of strong inelastic cotunneling

K. A. Matveev, A. V. Andreev

Published 2002-01-11Version 1

We study Coulomb blockade oscillations of thermoelectric coefficients of a single electron transistor based on a quantum dot strongly coupled to one of the leads by a quantum point contact. At temperatures below the charging energy E_C the transport of electrons is dominated by strong inelastic cotunneling. In this regime we find analytic expressions for the thermopower as a function of temperature T and the reflection amplitude $r$ in the contact. In the case when the electron spins are polarized by a strong external magnetic field, the thermopower shows sinusoidal oscillations as a function of the gate voltage with the amplitude of the order of $e^{-1}|r|\frac{T}{E_C}$. We obtain qualitatively different results in the absence of the magnetic field. At temperatures between $E_C$ and $E_C|r|^2$ the thermopower oscillations are sinusoidal with the amplitude of order $e^{-1}|r|^2 \ln \frac{E_C}{T}$. On the other hand, at $T\ll E_C|r|^2$ we find non-sinusoidal oscillations of the thermopower with the amplitude $\sim e^{-1} |r| \sqrt{T/E_C} \ln(E_C/T)$.