A tunable, dual mode field-effect or single electron transistor

Benoît Roche, Benoit Voisin, Xavier Jehl, Romain Wacquez, Marc Sanquer, Maud Vinet, Veeresh Deshpande, Bernard Previtali

Published 2012-01-18Version 1

A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron island is accumulated under the front gate of the device (SET regime), or a field-effect transistor is obtained by pinching off a bottom channel with a negative front gate voltage. The gradual transition between these two cases is observed. This dual function uses both vertical and horizontal tunable potential gradients in non-overlapped silicon-on-insulator channel.