{
  "id": "1201.3760",
  "version": "v1",
  "published": "2012-01-18T11:23:02.000Z",
  "updated": "2012-01-18T11:23:02.000Z",
  "title": "A tunable, dual mode field-effect or single electron transistor",
  "authors": [
    "Benoît Roche",
    "Benoit Voisin",
    "Xavier Jehl",
    "Romain Wacquez",
    "Marc Sanquer",
    "Maud Vinet",
    "Veeresh Deshpande",
    "Bernard Previtali"
  ],
  "journal": "Appl. Phys. Lett. 100, 032107 (2012)",
  "doi": "10.1063/1.3678042",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron island is accumulated under the front gate of the device (SET regime), or a field-effect transistor is obtained by pinching off a bottom channel with a negative front gate voltage. The gradual transition between these two cases is observed. This dual function uses both vertical and horizontal tunable potential gradients in non-overlapped silicon-on-insulator channel.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2012-01-18T11:23:02.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "85.35.Gv",
      "85.30.Tv"
    ],
    "keywords": [
      "single electron transistor",
      "dual mode field-effect",
      "silicon-on-insulator metal oxide semiconductor technology",
      "field-effect transistor",
      "front gate"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "journal": "Applied Physics Letters",
      "year": 2012,
      "month": "Jan",
      "volume": 100,
      "number": 3,
      "pages": "032107"
    },
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2012ApPhL.100c2107R"
    }
  }
}