arXiv:cond-mat/0109432AbstractReferencesReviewsResources
Generalized Einstein relation for disordered semiconductors - implications for device performance
Published 2001-09-24, updated 2004-02-03Version 2
The ratio between mobility and diffusion parameters is derived for a Gaussian-like density of states. This steady-state analysis is expected to be applicable to a wide range of organic materials (polymers or small molecules) as it relies on the existence of quasi-equilibrium only. Our analysis shows that there is an inherent dependence of the transport in trap-free disordered organic-materials on the charge density. The implications for the contact phenomena and exciton generation rate in light emitting diodes as well as channel-width in field-effect transistors is discussed.
Journal: Applied Physics Letters (80) 11, 1948 (2002)
DOI: 10.1063/1.1461419
Categories: cond-mat.stat-mech
Keywords: generalized einstein relation, device performance, disordered semiconductors, implications, exciton generation rate
Tags: journal article
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