{
  "id": "cond-mat/0109432",
  "version": "v2",
  "published": "2001-09-24T12:09:14.000Z",
  "updated": "2004-02-03T10:06:38.000Z",
  "title": "Generalized Einstein relation for disordered semiconductors - implications for device performance",
  "authors": [
    "Yohai Roichman",
    "Nir Tessler"
  ],
  "journal": "Applied Physics Letters (80) 11, 1948 (2002)",
  "doi": "10.1063/1.1461419",
  "categories": [
    "cond-mat.stat-mech"
  ],
  "abstract": "The ratio between mobility and diffusion parameters is derived for a Gaussian-like density of states. This steady-state analysis is expected to be applicable to a wide range of organic materials (polymers or small molecules) as it relies on the existence of quasi-equilibrium only. Our analysis shows that there is an inherent dependence of the transport in trap-free disordered organic-materials on the charge density. The implications for the contact phenomena and exciton generation rate in light emitting diodes as well as channel-width in field-effect transistors is discussed.",
  "revisions": [
    {
      "version": "v2",
      "updated": "2004-02-03T10:06:38.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "generalized einstein relation",
      "device performance",
      "disordered semiconductors",
      "implications",
      "exciton generation rate"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "AIP",
      "journal": "Appl. Phys. Lett."
    },
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}