arXiv:cond-mat/0012140AbstractReferencesReviewsResources
Influence of nano-mechanical properties on single electron tunneling: A vibrating Single-Electron Transistor
Daniel Boese, Herbert Schoeller
Published 2000-12-08Version 1
We describe single electron tunneling through molecular structures under the influence of nano-mechanical excitations. We develop a full quantum mechanical model, which includes charging effects and dissipation, and apply it to the vibrating C$_{60}$ single electron transistor experiment by Park {\em et al.} {[Nature {\bf 407}, 57 (2000)].} We find good agreement and argue vibrations to be essential to molecular electronic systems. We propose a mechanism to realize negative differential conductance using local bosonic excitations.
Comments: 7 pages, 6 figures
Journal: Europhys. Lett. 54, 668 (2001).
Categories: cond-mat.mes-hall
Keywords: single electron tunneling, vibrating single-electron transistor, nano-mechanical properties, single electron transistor experiment, local bosonic excitations
Tags: journal article
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