{
  "id": "cond-mat/0012140",
  "version": "v1",
  "published": "2000-12-08T13:52:08.000Z",
  "updated": "2000-12-08T13:52:08.000Z",
  "title": "Influence of nano-mechanical properties on single electron tunneling: A vibrating Single-Electron Transistor",
  "authors": [
    "Daniel Boese",
    "Herbert Schoeller"
  ],
  "comment": "7 pages, 6 figures",
  "journal": "Europhys. Lett. 54, 668 (2001).",
  "doi": "10.1209/epl/i2001-00367-8",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We describe single electron tunneling through molecular structures under the influence of nano-mechanical excitations. We develop a full quantum mechanical model, which includes charging effects and dissipation, and apply it to the vibrating C$_{60}$ single electron transistor experiment by Park {\\em et al.} {[Nature {\\bf 407}, 57 (2000)].} We find good agreement and argue vibrations to be essential to molecular electronic systems. We propose a mechanism to realize negative differential conductance using local bosonic excitations.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2000-12-08T13:52:08.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "single electron tunneling",
      "vibrating single-electron transistor",
      "nano-mechanical properties",
      "single electron transistor experiment",
      "local bosonic excitations"
    ],
    "tags": [
      "journal article"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 7,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}