P. König, J. Könemann, T. Schmidt, E. McCann, V. I. Fal'ko, R. J. Haug
Published 2000-10-04Version 1
Single electron tunneling through a single impurity level is used to probe the fluctuations of the local density of states in the emitter. The energy dependence of quasi-particle relaxation in the emitter can be extracted from the damping of the fluctuations of the local density of states (LDOS). At larger magnetic fields Zeeman splitting is observed.
Comments: 2 pages, 4 figures; 25th International Conference on the Physics of Semiconductors, Osaka, Japan, September 17-22, 2000
Local density of states in disordered graphene
Spatial distribution of local density of states in vicinity of impurity on semiconductor surface
Quasiparticle scattering and local density of states in graphite
