Jaesung Park, Wan-Seop Kim, Dong-Hun Chae
Published 2020-03-10Version 1
We report on realization of 10 quantum Hall devices in series fabricated using epitaxial graphene on silicon carbide. Precision measurements with a resistance bridge indicates that the quantized Hall resistance across an array at filling factor 2 is equivalent to 5 h/e^2 within the measurement uncertainty of approximately 4 10-8. A quantum-Hall phase diagram for the array shows that a metrological quantization of 5 h/e^2 can be achieved at the magnetic field of 6 T and temperature of 4 K. This experiment demonstrates the possibility of timely unchangeable resistance reference in various ranges in relaxed experimental conditions.
Mini array of quantum Hall devices based on epitaxial graphene
Stacking domain morphology in epitaxial graphene on silicon carbide
Intrinsic structural and electronic properties of the Buffer Layer on Silicon Carbide unraveled by Density Functional Theory
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