Mini array of quantum Hall devices based on epitaxial graphene

S. Novikov, N. Lebedeva, J. Hamalainen, I. Iisakka, P. Immonen, A. J. Manninen, A. Satrapinski

Published 2015-12-10Version 1

Series connection of four quantum Hall effect (QHE) devices based on epitaxial graphene films was studied for realization of a quantum resistance standard with an up-scaled value. The tested devices showed quantum Hall plateaux RH,2 at filling factor k = 2 starting from relatively low magnetic field (between 4 T and 5 T) when temperature was 1.5 K. Precision measurements of quantized Hall resistance of four QHE devices connected by triple series connections and external bonding wires were done at B = 7 T and T = 1.5 K using a commercial precision resistance bridge with 50 uA current through the QHE device. The results showed that the deviation of the quantized Hall resistance of the series connection of four graphene-based QHE devices from the expected value of 4*RH,2 = 2h/e2 was smaller than the relative standard uncertainty of the measurement (< 1*10-7) limited by the used resistance bridge.