{
  "id": "2003.04467",
  "version": "v1",
  "published": "2020-03-10T00:03:28.000Z",
  "updated": "2020-03-10T00:03:28.000Z",
  "title": "Realization of 5 h/e^2 with graphene quantum Hall resistance array",
  "authors": [
    "Jaesung Park",
    "Wan-Seop Kim",
    "Dong-Hun Chae"
  ],
  "doi": "10.1063/1.5139965",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We report on realization of 10 quantum Hall devices in series fabricated using epitaxial graphene on silicon carbide. Precision measurements with a resistance bridge indicates that the quantized Hall resistance across an array at filling factor 2 is equivalent to 5 h/e^2 within the measurement uncertainty of approximately 4 10-8. A quantum-Hall phase diagram for the array shows that a metrological quantization of 5 h/e^2 can be achieved at the magnetic field of 6 T and temperature of 4 K. This experiment demonstrates the possibility of timely unchangeable resistance reference in various ranges in relaxed experimental conditions.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2020-03-10T00:03:28.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "graphene quantum hall resistance array",
      "realization",
      "quantum hall devices",
      "quantum-hall phase diagram",
      "silicon carbide"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "AIP"
    },
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}