P. T. Coleridge, P. Zawadzki, A. S. Sachrajda, R. L. Williams, Y. Feng
Published 1999-06-17Version 1
Magnetoresistance measurements are presented for a strained p-SiGe quantum well sample where the density is varied through the B=0 metal-insulator transition. The close relationship between this transition, the high field Hall insulator transition and the filling factor $\nu$=3/2 insulating state is demonstrated.
Comments: 6 pages, 4 figures. Submitted to EP2DS XIII conference 1999
Electrostatics of Edge States of Quantum Hall Systems with Constrictions: Metal--Insulator Transition Tuned by External Gates
Metal-insulator transition in a boundary three chain model
Unexpected Behavior of the Local Compressibility Near the B=0 Metal-Insulator Transition
