{
  "id": "cond-mat/9906285",
  "version": "v1",
  "published": "1999-06-17T20:17:48.000Z",
  "updated": "1999-06-17T20:17:48.000Z",
  "title": "Universal Behaviour of Metal-Insulator Transitions in the p-SiGe System",
  "authors": [
    "P. T. Coleridge",
    "P. Zawadzki",
    "A. S. Sachrajda",
    "R. L. Williams",
    "Y. Feng"
  ],
  "comment": "6 pages, 4 figures. Submitted to EP2DS XIII conference 1999",
  "doi": "10.1016/S1386-9477(99)00142-3",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.str-el"
  ],
  "abstract": "Magnetoresistance measurements are presented for a strained p-SiGe quantum well sample where the density is varied through the B=0 metal-insulator transition. The close relationship between this transition, the high field Hall insulator transition and the filling factor $\\nu$=3/2 insulating state is demonstrated.",
  "revisions": [
    {
      "version": "v1",
      "updated": "1999-06-17T20:17:48.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "metal-insulator transition",
      "p-sige system",
      "universal behaviour",
      "high field hall insulator transition",
      "p-sige quantum"
    ],
    "tags": [
      "conference paper",
      "journal article"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 6,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}