Makoto Itoh
Published 1998-04-01Version 1
An attempt is made to simulate the homoepitaxial growth of a Si(111) surface by the kinetic Monte Carlo method in which the standard Solid-on-Solid model and the planar model of the (7x7) surface reconstruction are used in combination. By taking account of surface reconstructions as well as atomic deposition and migrations, it is shown that the effect of a coorparative stacking transformation is necessary for a layer growth.
Comments: 4 pages, 5 figures. For Fig.1 of this article, please see Fig.2 of Phys.Rev. B56, 3583 (1997). To appear in Phys.Rev.B. (June 1998)
Journal: Phys. Rev. B 57, 14623 (1998).
Monte Carlo Study of Maghemite Nanoparticles
Dynamics near the Surface Reconstruction of W(100)
A Monte Carlo study on the temperature dependence of hysteresis loops in Ising Spin-1 Square Bilayers
