{
  "id": "cond-mat/9804004",
  "version": "v1",
  "published": "1998-04-01T15:21:21.000Z",
  "updated": "1998-04-01T15:21:21.000Z",
  "title": "Monte Carlo study of Si(111) homoepitaxy",
  "authors": [
    "Makoto Itoh"
  ],
  "comment": "4 pages, 5 figures. For Fig.1 of this article, please see Fig.2 of Phys.Rev. B56, 3583 (1997). To appear in Phys.Rev.B. (June 1998)",
  "journal": "Phys. Rev. B 57, 14623 (1998).",
  "doi": "10.1103/PhysRevB.57.14623",
  "categories": [
    "cond-mat.stat-mech",
    "cond-mat.mtrl-sci"
  ],
  "abstract": "An attempt is made to simulate the homoepitaxial growth of a Si(111) surface by the kinetic Monte Carlo method in which the standard Solid-on-Solid model and the planar model of the (7x7) surface reconstruction are used in combination. By taking account of surface reconstructions as well as atomic deposition and migrations, it is shown that the effect of a coorparative stacking transformation is necessary for a layer growth.",
  "revisions": [
    {
      "version": "v1",
      "updated": "1998-04-01T15:21:21.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "monte carlo study",
      "homoepitaxy",
      "surface reconstruction",
      "kinetic monte carlo method",
      "standard solid-on-solid model"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Phys. Rev. B"
    },
    "note": {
      "typesetting": "TeX",
      "pages": 4,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}