D. Simonian, S. V. Kravchenko, M. P. Sarachik
Published 1996-11-19, updated 1996-12-18Version 2
We report a remarkable symmetry between the resistivity and conductivity on opposite sides of the B=0 metal-insulator transition in a two-dimensional electron gas in high-mobility silicon MOSFET's. This symmetry implies that the transport mechanisms on the two sides are related.
Comments: The substance of the paper is unchanged but we have given a more appropriate credit to earlier work
Percolation-type description of the metal-insulator transition in two dimensions
Two-species percolation and Scaling theory of the metal-insulator transition in two dimensions
Graphene: carbon in two dimensions
