{
  "id": "cond-mat/9611147",
  "version": "v2",
  "published": "1996-11-19T22:23:52.000Z",
  "updated": "1996-12-18T23:48:56.000Z",
  "title": "Reflection symmetry at a B=0 metal-insulator transition in two dimensions",
  "authors": [
    "D. Simonian",
    "S. V. Kravchenko",
    "M. P. Sarachik"
  ],
  "comment": "The substance of the paper is unchanged but we have given a more appropriate credit to earlier work",
  "doi": "10.1103/PhysRevB.55.R13421",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We report a remarkable symmetry between the resistivity and conductivity on opposite sides of the B=0 metal-insulator transition in a two-dimensional electron gas in high-mobility silicon MOSFET's. This symmetry implies that the transport mechanisms on the two sides are related.",
  "revisions": [
    {
      "version": "v2",
      "updated": "1996-12-18T23:48:56.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "metal-insulator transition",
      "reflection symmetry",
      "dimensions",
      "high-mobility silicon mosfets",
      "two-dimensional electron gas"
    ],
    "tags": [
      "journal article"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}