arXiv Analytics

Sign in

arXiv:cond-mat/0701053AbstractReferencesReviewsResources

Sum Rules for the Optical and Hall Conductivity in Graphene

V. P. Gusynin, S. G. Sharapov, J. P. Carbotte

Published 2007-01-03, updated 2007-04-12Version 2

Graphene has two atoms per unit cell with quasiparticles exhibiting the Dirac-like behavior. These properties lead to interband in addition to intraband optical transitions and modify the $f$-sum rule on the longitudinal conductivity. The expected dependence of the corresponding spectral weight on the applied gate voltage $V_g$ in a field effect graphene transistor is $\sim {const}- |V_g|^{3/2}$. For $V_g =0$, its temperature dependence is $T^3$ rather than the usual $T^2$. For the Hall conductivity, the corresponding spectral weight is determined by the Hall frequency $\omega_H$ which is linear in the carrier imbalance density $\rho$, and hence proportional to $V_g$, and is different from the cyclotron frequency for Dirac quasiparticles.

Comments: 16 pages, RevTeX4, 4 EPS figures; v2: to match PRB version
Journal: Phys.Rev. B75 (2007) 165407
Categories: cond-mat.mes-hall
Related articles: Most relevant | Search more
arXiv:1908.10857 [cond-mat.mes-hall] (Published 2019-08-28)
A Cantilever Torque Magnetometry Method for the Measurement of Hall Conductivity of Highly Resistive Samples
arXiv:0904.0097 [cond-mat.mes-hall] (Published 2009-04-01)
Sign reversal of Hall conductivity and quantum confinement in graphene ribbons
arXiv:1503.00676 [cond-mat.mes-hall] (Published 2015-03-02)
Inertial-Hall effect: the influence of rotation on the Hall conductivity