{
  "id": "cond-mat/0701053",
  "version": "v2",
  "published": "2007-01-03T17:49:36.000Z",
  "updated": "2007-04-12T21:46:57.000Z",
  "title": "Sum Rules for the Optical and Hall Conductivity in Graphene",
  "authors": [
    "V. P. Gusynin",
    "S. G. Sharapov",
    "J. P. Carbotte"
  ],
  "comment": "16 pages, RevTeX4, 4 EPS figures; v2: to match PRB version",
  "journal": "Phys.Rev. B75 (2007) 165407",
  "doi": "10.1103/PhysRevB.75.165407",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "Graphene has two atoms per unit cell with quasiparticles exhibiting the Dirac-like behavior. These properties lead to interband in addition to intraband optical transitions and modify the $f$-sum rule on the longitudinal conductivity. The expected dependence of the corresponding spectral weight on the applied gate voltage $V_g$ in a field effect graphene transistor is $\\sim {const}- |V_g|^{3/2}$. For $V_g =0$, its temperature dependence is $T^3$ rather than the usual $T^2$. For the Hall conductivity, the corresponding spectral weight is determined by the Hall frequency $\\omega_H$ which is linear in the carrier imbalance density $\\rho$, and hence proportional to $V_g$, and is different from the cyclotron frequency for Dirac quasiparticles.",
  "revisions": [
    {
      "version": "v2",
      "updated": "2007-04-12T21:46:57.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "hall conductivity",
      "sum rule",
      "corresponding spectral weight",
      "field effect graphene transistor",
      "carrier imbalance density"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Phys. Rev. B"
    },
    "note": {
      "typesetting": "RevTeX",
      "pages": 16,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2007cond.mat..1053G"
    }
  }
}