K. MacLean, S. Amasha, Iuliana P. Radu, D. M. Zumbuhl, M. A. Kastner, M. P. Hanson, A. C. Gossard
Published 2006-10-25Version 1
We present measurements of the rates for an electron to tunnel on and off a quantum dot, obtained using a quantum point contact charge sensor. The tunnel rates show exponential dependence on drain-source bias and plunger gate voltages. The tunneling process is shown to be elastic, and a model describing tunneling in terms of the dot energy relative to the height of the tunnel barrier quantitatively describes the measurements.
Comments: 4 pages, 4 figures
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