{
  "id": "cond-mat/0610679",
  "version": "v1",
  "published": "2006-10-25T14:37:33.000Z",
  "updated": "2006-10-25T14:37:33.000Z",
  "title": "Energy Dependent Tunneling in a Quantum Dot",
  "authors": [
    "K. MacLean",
    "S. Amasha",
    "Iuliana P. Radu",
    "D. M. Zumbuhl",
    "M. A. Kastner",
    "M. P. Hanson",
    "A. C. Gossard"
  ],
  "comment": "4 pages, 4 figures",
  "doi": "10.1103/PhysRevLett.98.036802",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We present measurements of the rates for an electron to tunnel on and off a quantum dot, obtained using a quantum point contact charge sensor. The tunnel rates show exponential dependence on drain-source bias and plunger gate voltages. The tunneling process is shown to be elastic, and a model describing tunneling in terms of the dot energy relative to the height of the tunnel barrier quantitatively describes the measurements.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2006-10-25T14:37:33.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "quantum dot",
      "energy dependent tunneling",
      "quantum point contact charge sensor",
      "plunger gate voltages",
      "measurements"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Phys. Rev. Lett."
    },
    "note": {
      "typesetting": "TeX",
      "pages": 4,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}