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Influence of Roughness and Disorder on Tunneling Magnetoresistance
P. X. Xu, V. M. Karpan, K. Xia, M. Zwierzycki, I. Marushchenko, P. J. Kelly
Published 2006-01-13, updated 2006-05-30Version 2
A systematic, quantitative study of the effect of interface roughness and disorder on the magnetoresistance of FeCo$|$vacuum$|$FeCo magnetic tunnel junctions is presented based upon parameter-free electronic structure calculations. Surface roughness is found to have a very strong effect on the spin-polarized transport while that of disorder in the leads (leads consisting of a substitutional alloy) is weaker but still sufficient to suppress the huge tunneling magneto-resistance (TMR) predicted for ideal systems.
Journal: Phys. Rev. B 73, 180402(R) (2006)
Categories: cond-mat.mes-hall, cond-mat.mtrl-sci
Keywords: tunneling magnetoresistance, parameter-free electronic structure calculations, feco magnetic tunnel junctions, ideal systems, interface roughness
Tags: journal article
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