Impact of interface roughness on perpendicular transport and domain formation in superlattices

Andreas Wacker, Antti-Pekka Jauho

Published 1996-10-15Version 1

A microscopic calculation of the perpendicular current in doped multiple quantum wells is presented. Interface roughness is shown to affect the resonant transitions as well as to cause a nonresonant background current. The theoretical characteristics exhibit several branches due to the formation of electric field domains in quantitative agreement with experimental data.