Control of spin relaxation in semiconductor double quantum dots

Y. Y. Wang, M. W. Wu

Published 2006-01-02, updated 2006-07-13Version 5

We propose a scheme to manipulate the spin relaxation in vertically coupled semiconductor double quantum dots. Up to {\em twelve} orders of magnitude variation of the spin relaxation time can be achieved by a small gate voltage applied vertically on the double dot. Different effects such as the dot size, barrier height, inter-dot distance, and magnetic field on the spin relaxation are investigated in detail. The condition to achieve a large variation is discussed.