{
  "id": "cond-mat/0601028",
  "version": "v5",
  "published": "2006-01-02T16:00:54.000Z",
  "updated": "2006-07-13T08:48:54.000Z",
  "title": "Control of spin relaxation in semiconductor double quantum dots",
  "authors": [
    "Y. Y. Wang",
    "M. W. Wu"
  ],
  "comment": "5 pages, 4 figures, to be published in PRB",
  "journal": "Phys. Rev. B 74, 165312 (2006).",
  "doi": "10.1103/PhysRevB.74.165312",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.mtrl-sci"
  ],
  "abstract": "We propose a scheme to manipulate the spin relaxation in vertically coupled semiconductor double quantum dots. Up to {\\em twelve} orders of magnitude variation of the spin relaxation time can be achieved by a small gate voltage applied vertically on the double dot. Different effects such as the dot size, barrier height, inter-dot distance, and magnetic field on the spin relaxation are investigated in detail. The condition to achieve a large variation is discussed.",
  "revisions": [
    {
      "version": "v5",
      "updated": "2006-07-13T08:48:54.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "spin relaxation time",
      "small gate voltage",
      "coupled semiconductor double quantum dots",
      "magnitude variation"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "publisher": "APS",
      "journal": "Phys. Rev. B"
    },
    "note": {
      "typesetting": "TeX",
      "pages": 5,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}