Min Shen, Semion Saikin, Ming-Cheng Cheng
Published 2004-05-25, updated 2004-07-30Version 2
We investigate effect of a step-doping profile on the spin injection from a ferromagnetic metal contact into a semiconductor quantum well (QW) in spin FETs using a Monte Carlo model. The considered scheme uses a heavily doped layer at the metal/semiconductor interface to vary the Schottky barrier shape and enhance the tunneling current. It is found that spin flux (spin current density) is enhanced proportionally to the total current, and the variation of current spin polarization does not exceed 20%.
Comments: 5 pages, 8 figures. This paper is based on the work presented at the 2004 IEEE NTC Quantum Device Technology Workshop (Clarkson Unviersity, Potsdam, NY, May 17-21, 2004), IEEE Transactions on Nanotechnology, accepted for publication
Journal: IEEE Trans. Nanotechnology 4, 40-44 (2005)
Monte Carlo modeling of spin injection through a Schottky barrier and spin transport in a semiconductor quantum well
Spin Injection into and Spin Pumping by Non-Collinear Antiferromagnets
Theory of Spin Injection in Two-dimensional Metals with Proximity-Induced Spin-Orbit Coupling
