arXiv Analytics

Sign in

arXiv:1907.03727 [cond-mat.mes-hall]AbstractReferencesReviewsResources

Theory of Spin Injection in Two-dimensional Metals with Proximity-Induced Spin-Orbit Coupling

Yu-Hsuan Lin, Chunli Huang, Manuel Offidani, Aires Ferreira, Miguel A. Cazalilla

Published 2019-07-08Version 1

Spin injection is a powerful experimental probe into a wealth of nonequilibrium spin-dependent phenomena displayed by materials with spin-orbit coupling (SOC). Here, we develop a theory of coupled spin-charge diffusive transport in two-dimensional spin-valve devices. The theory describes a realistic proximity-induced SOC with both spatially uniform and random components of the SOC due to adatoms and imperfections, and applies to the two dimensional electron gases found in two-dimensional materials and van der Walls heterostructures. The various charge-to-spin conversion mechanisms known to be present in diffusive metals, including the spin Hall effect and several mechanisms contributing current-induced spin polarization are accounted for. Our analysis shows that the dominant conversion mechanisms can be discerned by analyzing the nonlocal resistance of the spin-valve for different polarizations of the injected spins and as a function of the applied in-plane magnetic field.

Related articles: Most relevant | Search more
arXiv:2306.10291 [cond-mat.mes-hall] (Published 2023-06-17)
Proximity-induced spin-orbit coupling in phosphorene on WSe$_2$ monolayer
arXiv:cond-mat/0405591 (Published 2004-05-25, updated 2004-07-30)
Spin injection in spin FETs using a step-doping profile
arXiv:1405.0059 [cond-mat.mes-hall] (Published 2014-05-01)
Spin injection from a ferromagnet into a semiconductor in the case of a rough interface