O. Prus, Y. Yaish, M. Reznikov, U. Sivan, V. Pudalov
Published 2002-09-05, updated 2003-06-07Version 3
A novel method invented to measure the minute thermodynamic spin magnetization of dilute two dimensional fermions is applied to electrons in a silicon inversion layer. Interplay between the ferromagnetic interaction and disorder enhances the low temperature susceptibility up to 7.5 folds compared with the Pauli susceptibility of non-interacting electrons. The magnetization peaks in the vicinity of the density where transition to strong localization takes place. At the same density, the susceptibility becomes extremely close to that of free spins (Curie susceptibility), indicating an almost perfect compensation of the kinetic energy toll associated with spin polarization by the energy gained from the ferromagnetic correlation. Yet, the balance favors a paramagnetic phase over spontaneous magnetization.
Comments: Minor changes. One reference is added and typos fixed. As appeared in PRB
Journal: Phys. Rev. B 67, p. 205407 (2003)
On the Cooling of Electrons in a Silicon Inversion Layer
The Silicon Inversion Layer With A Ferromagnetic Gate: A Novel Spin Source
Effect of the Gate-dielectric stack on the quantum screening of the two-dimensional electron gas in silicon inversion layer
