C. Ciuti, J. P. McGuire, L. J. Sham
Published 2002-05-30, updated 2002-10-09Version 2
A theoretical prediction of the spin-dependent electron self-energy and in-plane transport of a two-dimensional electron gas in proximity with a ferromagnetic gate is presented. The application of the predicted spin-dependent properties is illustrated by the proposal of a device configuration with two neighboring ferromagnetic gates which produces a magnetoresistance effect on the channel current generated by nonmagnetic source and drain contacts. Specific results are shown for a silicon inversion layer with iron gates. The gate leakage current is found to be beneficial to the spin effects.
Comments: 3 pages, 2 figures, Replaced with revised version
Effect of the Gate-dielectric stack on the quantum screening of the two-dimensional electron gas in silicon inversion layer
Spin-orbit interaction and spin relaxation in a two-dimensional electron gas
Magnetotransport in a two-dimensional electron gas in the presence of spin-orbit interaction
