{
  "id": "cond-mat/0205651",
  "version": "v2",
  "published": "2002-05-30T16:54:54.000Z",
  "updated": "2002-10-09T18:32:41.000Z",
  "title": "Spin-dependent properties of a two-dimensional electron gas with ferromagnetic gates",
  "authors": [
    "C. Ciuti",
    "J. P. McGuire",
    "L. J. Sham"
  ],
  "comment": "3 pages, 2 figures, Replaced with revised version",
  "doi": "10.1063/1.1530737",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "A theoretical prediction of the spin-dependent electron self-energy and in-plane transport of a two-dimensional electron gas in proximity with a ferromagnetic gate is presented. The application of the predicted spin-dependent properties is illustrated by the proposal of a device configuration with two neighboring ferromagnetic gates which produces a magnetoresistance effect on the channel current generated by nonmagnetic source and drain contacts. Specific results are shown for a silicon inversion layer with iron gates. The gate leakage current is found to be beneficial to the spin effects.",
  "revisions": [
    {
      "version": "v2",
      "updated": "2002-10-09T18:32:41.000Z"
    }
  ],
  "analyses": {
    "subjects": [
      "72.25.Mk",
      "73.40.Ns",
      "73.20.At",
      "73.23.Hk",
      "75.50.Bb",
      "85.75.-d"
    ],
    "keywords": [
      "two-dimensional electron gas",
      "ferromagnetic gate",
      "gate leakage current",
      "spin-dependent electron self-energy",
      "silicon inversion layer"
    ],
    "tags": [
      "journal article"
    ],
    "publication": {
      "journal": "Applied Physics Letters",
      "year": 2002,
      "month": "Dec",
      "volume": 81,
      "number": 25,
      "pages": 4781
    },
    "note": {
      "typesetting": "TeX",
      "pages": 3,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2002ApPhL..81.4781C"
    }
  }
}