Yu. G. Arapov, O. A. Kuznetsov, V. N. Neverov, G. I. Harus, N. G. Shelushinina, M. V. Yakunin
Published 2001-05-15Version 1
Two models for the long-range random impurity potential (the model with randomly distributed charged centers located within a layer and the model of the system with a spacer) are used for evaluation of the impurity potential fluctuation characteristics: the random potential amplitude, nonlinear screening length in vicinity of integer filling factors nu = 1 and nu = 2 and the background density of state (DOS). The described models are suitable for explanation of the unusually high value of DOS at nu = 1 and nu = 2, in contrast to the short-range impurity potential models.
Comments: to be presented at the 9-th International Symposium "Nanostructures-2001", St.Petersburg, Russia, June 2001
The key role of smooth impurity potential in formation of hole spectrum for p-Ge/Ge_{1-x}Si_x heterostructures in the quantum Hall regime
Oscillator strengths of dark charged excitons in the quantum Hall regime
Individual scatterers as microscopic origin of equilibration between spin- polarized edge channels in the quantum Hall regime
