{
  "id": "cond-mat/0105285",
  "version": "v1",
  "published": "2001-05-15T04:27:04.000Z",
  "updated": "2001-05-15T04:27:04.000Z",
  "title": "Impurity potential fluctuations for selectively doped p-Ge/Ge_{1-x}Si_x heterostructures in the quantum Hall regime",
  "authors": [
    "Yu. G. Arapov",
    "O. A. Kuznetsov",
    "V. N. Neverov",
    "G. I. Harus",
    "N. G. Shelushinina",
    "M. V. Yakunin"
  ],
  "comment": "to be presented at the 9-th International Symposium \"Nanostructures-2001\", St.Petersburg, Russia, June 2001",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "Two models for the long-range random impurity potential (the model with randomly distributed charged centers located within a layer and the model of the system with a spacer) are used for evaluation of the impurity potential fluctuation characteristics: the random potential amplitude, nonlinear screening length in vicinity of integer filling factors nu = 1 and nu = 2 and the background density of state (DOS). The described models are suitable for explanation of the unusually high value of DOS at nu = 1 and nu = 2, in contrast to the short-range impurity potential models.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2001-05-15T04:27:04.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "quantum hall regime",
      "heterostructures",
      "short-range impurity potential models",
      "distributed charged centers"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}