Hierarchy of the third-order anomalous Hall effect: from clean to disorder regime

Chanchal K. Barman, Arghya Chattopadhyay, Surajit Sarkar, Jian-Xin Zhu, Snehasish Nandy

Published 2024-09-12Version 1

The third-order anomalous Hall effect (TOAHE) driven by Berry connection polarizability in Dirac materials offers a promising avenue for exploring quantum geometric phenomena. We investigate the role of impurity scattering on TOAHE using the semiclassical Boltzmann framework, via a comparison of the intrinsic contributions (stemming from the Berry connection polarizability effect) with the extrinsic contributions caused by the disorder. To validate our theoretical findings, we employ a generalized two-dimensional low-energy Dirac model to analytically assess the intrinsic and extrinsic contributions to the TOAHE. Our analysis reveals distinct disorder-mediated effects, including skew scattering and side jump contributions. We also elucidate their intriguing dependencies on Fermi surface anisotropy and discuss opportunities for experimental exploration.