{
  "id": "2409.07993",
  "version": "v1",
  "published": "2024-09-12T12:36:20.000Z",
  "updated": "2024-09-12T12:36:20.000Z",
  "title": "Hierarchy of the third-order anomalous Hall effect: from clean to disorder regime",
  "authors": [
    "Chanchal K. Barman",
    "Arghya Chattopadhyay",
    "Surajit Sarkar",
    "Jian-Xin Zhu",
    "Snehasish Nandy"
  ],
  "comment": "6 Pages, 1 Figure",
  "categories": [
    "cond-mat.mes-hall",
    "cond-mat.mtrl-sci"
  ],
  "abstract": "The third-order anomalous Hall effect (TOAHE) driven by Berry connection polarizability in Dirac materials offers a promising avenue for exploring quantum geometric phenomena. We investigate the role of impurity scattering on TOAHE using the semiclassical Boltzmann framework, via a comparison of the intrinsic contributions (stemming from the Berry connection polarizability effect) with the extrinsic contributions caused by the disorder. To validate our theoretical findings, we employ a generalized two-dimensional low-energy Dirac model to analytically assess the intrinsic and extrinsic contributions to the TOAHE. Our analysis reveals distinct disorder-mediated effects, including skew scattering and side jump contributions. We also elucidate their intriguing dependencies on Fermi surface anisotropy and discuss opportunities for experimental exploration.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2024-09-12T12:36:20.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "third-order anomalous hall effect",
      "disorder regime",
      "two-dimensional low-energy dirac model",
      "berry connection polarizability effect",
      "extrinsic contributions"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 6,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}