Role of remote interfacial phonons in the resistivity of graphene

Y. G. You, J. H. Ahn, B. H. Park, Y. Kwon, E. E. B. Campbell, S. H. Jhang

Published 2019-03-22Version 1

The temperature ($\it T$) dependence of electrical resistivity in graphene has been experimentally investigated between 10 and 400 K for samples prepared on various substrates; HfO$_2$, SiO$_2$ and h-BN. The resistivity of graphene shows a linear $\it T$-dependence at low $\it T$ and becomes superlinear above a substrate-dependent transition temperature. The results are explained by remote interfacial phonon scattering by surface optical phonons at the substrates. The use of an appropriate substrate can lead to a significant improvement in the charge transport of graphene.