{
  "id": "1903.09389",
  "version": "v1",
  "published": "2019-03-22T07:41:38.000Z",
  "updated": "2019-03-22T07:41:38.000Z",
  "title": "Role of remote interfacial phonons in the resistivity of graphene",
  "authors": [
    "Y. G. You",
    "J. H. Ahn",
    "B. H. Park",
    "Y. Kwon",
    "E. E. B. Campbell",
    "S. H. Jhang"
  ],
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "The temperature ($\\it T$) dependence of electrical resistivity in graphene has been experimentally investigated between 10 and 400 K for samples prepared on various substrates; HfO$_2$, SiO$_2$ and h-BN. The resistivity of graphene shows a linear $\\it T$-dependence at low $\\it T$ and becomes superlinear above a substrate-dependent transition temperature. The results are explained by remote interfacial phonon scattering by surface optical phonons at the substrates. The use of an appropriate substrate can lead to a significant improvement in the charge transport of graphene.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2019-03-22T07:41:38.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "resistivity",
      "substrate-dependent transition temperature",
      "remote interfacial phonon scattering",
      "charge transport",
      "surface optical phonons"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}