Sergey D. Ganichev, Maxim Trushin, John Schliemann
Published 2016-06-07Version 1
This is an overview of current-induced spin polarization in gyrotropic semiconductor nanostructures. Such a spin polarization as response to a charge current may be classified as the inverse of the spin-galvanic effect, and sometimes is called as magneto-electrical effect or Edelstein (Rashba-Edelstein) effect. Apart from reviewing the experimental status of affairs, we have provided a detailed theoretical description of both effects in terms of a phenomenological model of spin-dependent relaxation processes, and an alternative theoretical approach based on the quasi-classical Boltzmann equation.
Spin polarisation and spin dependent scattering of holes in transverse magnetic focussing
Thin film epitaxial [111] Co$_{50}$Pt$_{50}$: Structure, magnetisation, and spin polarisation
Spin-orbit induced spin-qubit control in nanowires
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