{
  "id": "1606.02043",
  "version": "v1",
  "published": "2016-06-07T07:19:17.000Z",
  "updated": "2016-06-07T07:19:17.000Z",
  "title": "Spin polarisation by current",
  "authors": [
    "Sergey D. Ganichev",
    "Maxim Trushin",
    "John Schliemann"
  ],
  "comment": "10 pages",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "This is an overview of current-induced spin polarization in gyrotropic semiconductor nanostructures. Such a spin polarization as response to a charge current may be classified as the inverse of the spin-galvanic effect, and sometimes is called as magneto-electrical effect or Edelstein (Rashba-Edelstein) effect. Apart from reviewing the experimental status of affairs, we have provided a detailed theoretical description of both effects in terms of a phenomenological model of spin-dependent relaxation processes, and an alternative theoretical approach based on the quasi-classical Boltzmann equation.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2016-06-07T07:19:17.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "spin polarisation",
      "gyrotropic semiconductor nanostructures",
      "spin-dependent relaxation processes",
      "spin-galvanic effect",
      "experimental status"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 10,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}