Matthias Berl, Lars Tiemann, Werner Dietsche, Helmut Karl, Werner Wegscheider
Published 2016-01-08Version 1
We present a new approach of back gate patterning that is compatible with the requirements of highest mobility molecular beam epitaxy. Contrary to common back gating techniques, our method is simple, reliable and can be scaled up for entire wafers. The back gate structures are defined by local oxygen implantation into a silicon doped GaAs epilayer, which suppresses the conductance without affecting the surface quality.
Comments: The following article has been submitted to Applied Physics Letters. After it is published, it will be found at http://scitation.aip.org/content/aip/journal/apl
Radiation-intensity and temperature dependence of microwave-induced magnetoresistance oscillations in high-mobility two-dimensional electron systems
Theory of magnetothermoelectric phenomena in high-mobility two-dimensional electron systems under microwave irradiation
Radiation-induced magnetoresistance oscillations in two-dimensional electron systems under bichromatic irradiation
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