{
  "id": "1601.01889",
  "version": "v1",
  "published": "2016-01-08T14:41:21.000Z",
  "updated": "2016-01-08T14:41:21.000Z",
  "title": "Structured Back Gates for High-Mobility Two-Dimensional Electron Systems Using Oxygen Ion Implantation",
  "authors": [
    "Matthias Berl",
    "Lars Tiemann",
    "Werner Dietsche",
    "Helmut Karl",
    "Werner Wegscheider"
  ],
  "comment": "The following article has been submitted to Applied Physics Letters. After it is published, it will be found at http://scitation.aip.org/content/aip/journal/apl",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We present a new approach of back gate patterning that is compatible with the requirements of highest mobility molecular beam epitaxy. Contrary to common back gating techniques, our method is simple, reliable and can be scaled up for entire wafers. The back gate structures are defined by local oxygen implantation into a silicon doped GaAs epilayer, which suppresses the conductance without affecting the surface quality.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2016-01-08T14:41:21.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "high-mobility two-dimensional electron systems",
      "oxygen ion implantation",
      "highest mobility molecular beam epitaxy"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 0,
      "language": "en",
      "license": "arXiv",
      "status": "editable"
    }
  }
}