Spin-flip Raman scattering of the $Γ$-X mixed exciton in indirect band-gap (In,Al)As/AlAs quantum dots

J. Debus, T. S. Shamirzaev, D. Dunker, V. F. Sapega, E. L. Ivchenko, D. R. Yakovlev, A. I. Toropov, M. Bayer

Published 2014-06-09Version 1

The band structure of type-I (In,Al)As/AlAs quantum dots with band gap energy exceeding 1.63 eV is indirect in momentum space, leading to long-lived exciton states with potential applications in quantum information. Optical access to these excitons is provided by mixing of the $\Gamma$- and X-conduction band valleys, from which control of their spin states can be gained. This access is used here for studying the exciton spin-level structure by resonant spin-flip Raman scattering, allowing us to accurately measure the anisotropic hole and isotropic electron $g$ factors. The spin-flip mechanisms for the indirect exciton and its constituents as well as the underlying optical selection rules are determined. The spin-flip intensity is a reliable measure of the strength of $\Gamma$-X-valley mixing, as evidenced by both experiment and theory.