{ "id": "1406.2684", "version": "v1", "published": "2014-06-09T09:15:57.000Z", "updated": "2014-06-09T09:15:57.000Z", "title": "Spin-flip Raman scattering of the $Γ$-X mixed exciton in indirect band-gap (In,Al)As/AlAs quantum dots", "authors": [ "J. Debus", "T. S. Shamirzaev", "D. Dunker", "V. F. Sapega", "E. L. Ivchenko", "D. R. Yakovlev", "A. I. Toropov", "M. Bayer" ], "comment": "5 pages, 3 figures", "categories": [ "cond-mat.mes-hall" ], "abstract": "The band structure of type-I (In,Al)As/AlAs quantum dots with band gap energy exceeding 1.63 eV is indirect in momentum space, leading to long-lived exciton states with potential applications in quantum information. Optical access to these excitons is provided by mixing of the $\\Gamma$- and X-conduction band valleys, from which control of their spin states can be gained. This access is used here for studying the exciton spin-level structure by resonant spin-flip Raman scattering, allowing us to accurately measure the anisotropic hole and isotropic electron $g$ factors. The spin-flip mechanisms for the indirect exciton and its constituents as well as the underlying optical selection rules are determined. The spin-flip intensity is a reliable measure of the strength of $\\Gamma$-X-valley mixing, as evidenced by both experiment and theory.", "revisions": [ { "version": "v1", "updated": "2014-06-09T09:15:57.000Z" } ], "analyses": { "subjects": [ "78.67.Hc", "73.21.La", "78.30.Fs", "85.75.-d" ], "keywords": [ "as/alas quantum dots", "spin-flip raman scattering", "indirect band-gap", "mixed exciton", "resonant spin-flip raman" ], "tags": [ "journal article" ], "publication": { "doi": "10.1103/PhysRevB.90.125431", "journal": "Physical Review B", "year": 2014, "month": "Sep", "volume": 90, "number": 12, "pages": 125431 }, "note": { "typesetting": "TeX", "pages": 5, "language": "en", "license": "arXiv", "status": "editable", "adsabs": "2014PhRvB..90l5431D" } } }