Eric M. Spanton, Katja C. Nowack, Lingjie Du, Gerard Sullivan, Rui-Rui Du, Kathryn A. Moler
Published 2014-01-07, updated 2014-06-21Version 2
Quantum spin Hall devices with edges much longer than several microns do not display ballistic transport: that is, their measured conductances are much less than $e^2/h$ per edge. We imaged edge currents in InAs/GaSb quantum wells with long edges and determined an effective edge resistance. Surprisingly, although the effective edge resistance is much greater than $h/e^2$, it is independent of temperature up to 30 K within experimental resolution. Known candidate scattering mechanisms do not explain our observation of an effective edge resistance that is large yet temperature-independent.
Comments: Version accepted to Physical Review Letters (http://prl.aps.org/). 12 pages, 3 figures. Supplementary Online Materials available at http://stanford.edu/group/moler/papers/Spanton_InAsGaSb_imaging_SI_v2.pdf
Journal: Phys. Rev. Lett. 113, 026804 (2014)
Spin Transfer Torque and Electric Current in Helical Edge States in Quantum Spin Hall Devices
Electric control of inverted gap and hybridization gap in type II InAs/GaSb quantum wells
Edge transport in InAs and InAs/GaSb quantum wells
![QR code for arXiv:1401.1531 [cond-mat.mes-hall]](http://oss.arxitics.com/images/favicon.svg)