{ "id": "1401.1531", "version": "v2", "published": "2014-01-07T22:28:06.000Z", "updated": "2014-06-21T19:02:12.000Z", "title": "Images of edge current in InAs/GaSb quantum wells", "authors": [ "Eric M. Spanton", "Katja C. Nowack", "Lingjie Du", "Gerard Sullivan", "Rui-Rui Du", "Kathryn A. Moler" ], "comment": "Version accepted to Physical Review Letters (http://prl.aps.org/). 12 pages, 3 figures. Supplementary Online Materials available at http://stanford.edu/group/moler/papers/Spanton_InAsGaSb_imaging_SI_v2.pdf", "journal": "Phys. Rev. Lett. 113, 026804 (2014)", "doi": "10.1103/PhysRevLett.113.026804", "categories": [ "cond-mat.mes-hall" ], "abstract": "Quantum spin Hall devices with edges much longer than several microns do not display ballistic transport: that is, their measured conductances are much less than $e^2/h$ per edge. We imaged edge currents in InAs/GaSb quantum wells with long edges and determined an effective edge resistance. Surprisingly, although the effective edge resistance is much greater than $h/e^2$, it is independent of temperature up to 30 K within experimental resolution. Known candidate scattering mechanisms do not explain our observation of an effective edge resistance that is large yet temperature-independent.", "revisions": [ { "version": "v2", "updated": "2014-06-21T19:02:12.000Z" } ], "analyses": { "subjects": [ "73.63.-b", "72.20.Dp", "85.25.Dq" ], "keywords": [ "inas/gasb quantum wells", "effective edge resistance", "quantum spin hall devices", "display ballistic transport", "imaged edge currents" ], "tags": [ "journal article" ], "publication": { "publisher": "APS", "journal": "Physical Review Letters", "year": 2014, "month": "Jul", "volume": 113, "number": 2, "pages": "026804" }, "note": { "typesetting": "TeX", "pages": 12, "language": "en", "license": "arXiv", "status": "editable", "adsabs": "2014PhRvL.113b6804S" } } }