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arXiv:1303.3749 [cond-mat.mes-hall]AbstractReferencesReviewsResources

Quantum resistance metrology using graphene

T. J. B. M. Janssen, A. Tzalenchuk, S. Lara-Avila, S. Kubatkin, V. I. Fal'ko

Published 2013-03-15, updated 2013-07-18Version 2

In this paper we review the recent extraordinary progress in the development of a new quantum standard for resistance based on graphene. We discuss the unique properties of this material system relating to resistance metrology and discuss results of the recent highest-ever precision direct comparison of the Hall resistance between graphene and traditional GaAs. We mainly focus our review on graphene expitaxially grown on SiC, a system which so far resulted in the best results. We also brie y discuss progress in the two other graphene material systems, exfoliated graphene and chemical vapour deposition graphene, and make a critical comparison with SiC graphene. Finally we discuss other possible applications of graphene in metrology.

Comments: arXiv admin note: substantial text overlap with arXiv:1202.2985
Journal: Progress in Physics 76, 104501 (2013)
Categories: cond-mat.mes-hall
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