{ "id": "1303.3749", "version": "v2", "published": "2013-03-15T12:08:58.000Z", "updated": "2013-07-18T12:03:52.000Z", "title": "Quantum resistance metrology using graphene", "authors": [ "T. J. B. M. Janssen", "A. Tzalenchuk", "S. Lara-Avila", "S. Kubatkin", "V. I. Fal'ko" ], "comment": "arXiv admin note: substantial text overlap with arXiv:1202.2985", "journal": "Progress in Physics 76, 104501 (2013)", "doi": "10.1088/0034-4885/76/10/104501", "categories": [ "cond-mat.mes-hall" ], "abstract": "In this paper we review the recent extraordinary progress in the development of a new quantum standard for resistance based on graphene. We discuss the unique properties of this material system relating to resistance metrology and discuss results of the recent highest-ever precision direct comparison of the Hall resistance between graphene and traditional GaAs. We mainly focus our review on graphene expitaxially grown on SiC, a system which so far resulted in the best results. We also brie y discuss progress in the two other graphene material systems, exfoliated graphene and chemical vapour deposition graphene, and make a critical comparison with SiC graphene. Finally we discuss other possible applications of graphene in metrology.", "revisions": [ { "version": "v2", "updated": "2013-07-18T12:03:52.000Z" } ], "analyses": { "keywords": [ "quantum resistance metrology", "highest-ever precision direct comparison", "graphene material systems", "chemical vapour deposition graphene", "hall resistance" ], "tags": [ "journal article", "review article" ], "publication": { "publisher": "IOP", "journal": "Reports on Progress in Physics", "year": 2013, "month": "Oct", "volume": 76, "number": 10, "pages": 104501 }, "note": { "typesetting": "TeX", "pages": 0, "language": "en", "license": "arXiv", "status": "editable", "adsabs": "2013RPPh...76j4501J" } } }