A Transfer Hamiltonian model for devices based in quantum dot arrays

S. Illera, J. D. Prades, A. Cirera, A. Cornet

Published 2012-07-23Version 1

We present a model of electron transport through a random distribution of interacting quantum dots embedded in a dielectric matrix to simulate realistic devices. The method underlying the model depends only on fundamental parameters of the system and it is based on the Transfer Hamiltonian approach. A set of non-coherent rate equations can be written and the interaction between the quantum dots and between the quantum dots and the electrodes are introduced by transition rates and capacitive couplings. A realistic modelization of the capacitive couplings, the transmission coefficients, the electron/hole tunneling currents and the density of states of each quantum dot have been taken into account. The effects of the local potential are computed within the self-consistent field regime.