{
  "id": "1207.5513",
  "version": "v1",
  "published": "2012-07-23T20:00:02.000Z",
  "updated": "2012-07-23T20:00:02.000Z",
  "title": "A Transfer Hamiltonian model for devices based in quantum dot arrays",
  "authors": [
    "S. Illera",
    "J. D. Prades",
    "A. Cirera",
    "A. Cornet"
  ],
  "comment": "19 pages, 10 figures. arXiv admin note: text overlap with arXiv:cond-mat/0511652 by other authors",
  "categories": [
    "cond-mat.mes-hall"
  ],
  "abstract": "We present a model of electron transport through a random distribution of interacting quantum dots embedded in a dielectric matrix to simulate realistic devices. The method underlying the model depends only on fundamental parameters of the system and it is based on the Transfer Hamiltonian approach. A set of non-coherent rate equations can be written and the interaction between the quantum dots and between the quantum dots and the electrodes are introduced by transition rates and capacitive couplings. A realistic modelization of the capacitive couplings, the transmission coefficients, the electron/hole tunneling currents and the density of states of each quantum dot have been taken into account. The effects of the local potential are computed within the self-consistent field regime.",
  "revisions": [
    {
      "version": "v1",
      "updated": "2012-07-23T20:00:02.000Z"
    }
  ],
  "analyses": {
    "keywords": [
      "quantum dot arrays",
      "transfer hamiltonian model",
      "capacitive couplings",
      "simulate realistic devices",
      "non-coherent rate equations"
    ],
    "note": {
      "typesetting": "TeX",
      "pages": 19,
      "language": "en",
      "license": "arXiv",
      "status": "editable",
      "adsabs": "2012arXiv1207.5513I"
    }
  }
}